Polishing pad, method of producing the same and method of producing semiconductor device by using the same

ABSTRACT

The present invention provides a polishing pad used for planarizing inter layer dielectrics and the like by CMP (chemical mechanical polishing) in the manufacturing process of a semiconductor device, a method of producing the polishing pad and a method of producing a semiconductor device by using the polishing pad. The present invention relates to a semiconductor wafer polishing pad having grooves in a polishing surface and formed from a foamed polyurethane, wherein a processed surface of the groove comprising a side surface and a bottom surface has a surface roughness Ra of not more than 10.

TECHNICAL FIELD

The present invention relates to a polishing pad used for polishing amaterial to be polished, a method of producing the polishing pad and amethod of producing a semiconductor device by using the polishing pad.More particularly, it relates to a polishing pad used for planarizinginter layer dielectrics and the like by CMP (chemical mechanicalpolishing) in the manufacturing process of a semiconductor device, amethod of producing the polishing pad and a method of producing asemiconductor device by using the polishing pad.

BACKGROUND ART

Recently, in semiconductor integrated circuits, the device size havebeen scale down and the integration has been improved, and microprocessing has been required. In addition, the device structure has beencomplex and three-dimensional. The scale down has been accomplished bythe improvement of micro processing technique in the manufacturingprocess of a semiconductor device, particularly high resolution inphotolithography process which transfer a circuit pattern tophotosensitive organic film (photo resist) coated on a silicon wafer. Inthe photolithography process, techniques of exposure by using a lightsource of shorter wavelength have been developed. A method ofcompensating the deficiency of the depth of focus to assure theresolution without defocus of a micro pattern by reducing unevenness inthe device structure as possible has been attempted.

As a method of planarizing the unevenness in the device structure, theCMP method, to which mirror surface processing of a silicon wafer wasapplied, has been used. An apparatus for generally using in the CMPmethod is shown by reference to FIG. 1. The CMP apparatus used in theCMP method is provided with a polishing platen 2 for supporting apolishing pad 1 and with a supporting stand (polishing head) 5 forsupporting a material to be polished 4 (such as a semiconductor wafer).The polishing platen 2 and the supporting stand 5 are arranged such thatthe polished pad 1 and the material to be polished 4, both of which aresupported by them, are opposed to each other, and the polishing platenand the supporting stand are constituted to be capable of rotatingaround rotating shafts 6 and 7. The material to be polished 4 is stuckon the supporting stand 5 which is provided with a pressing mechanismfor pushing the material to be polished 4 onto the polishing pad 1 atthe time of polishing (not indicated). Abrasive (slurry) 3-feedingmechanism 8 is to feed an abrasive suspension having abrasive grainssuch as silica particles dispersed in an alkali solution to thepolishing pad 1 on the polishing platen 2. In addition, the CMPapparatus comprises dresser having abrasive grains of diamondelectrodeposited or melt bonded thereon to dress the surface of thepolishing pad (not indicated).

As an example of the method, there is a method of dressing the polishingpad by dresser, rotating the shafts 6 and 7, pushing the wafer 4 ontothe polishing pad 1 by the pressing mechanism while feeding an abrasiveslurry from the abrasive slurry-feeding mechanism 8 to the centerportion of the polishing pad to polishing the wafer. In the CMP method,micro scratches on the layer to be polished such as the inter layerdielectrics of the wafer, the dispersion of the abrasive rate and pooruniformity of the abrasive amount within the surface of a silicon waferare problem.

In order to restrain the formation of the micro scratches, it isnecessary that abrasive dust of the polishing pad and diamond of thedresser formed during dressing of the polishing pad, inter layerdielectrics, abrasive dust of the wafer and used abrasive slurry(collectively, abrasive waste) are discharged to the exterior of thepolishing pad. In the conventional CMP apparatus, the abrasive waste isdischarged by continuously feeding the abrasive slurry to the centerportion of the polishing pad in a sufficient amount. In case of forminga dressed layer on the polishing pad by dressing and then polishing thewafer while feeding the abrasive slurry described above, the abrasiveslurry is pushed out by centrifugal force from the rotation of thepolishing pad and by pushing the wafer onto the polishing pad.Therefore, the abrasive slurry is almost discharged to the exterior ofthe polishing pad without concerning the polishing to consume excessabrasive slurry, which is expensive.

In order to dissolve the problems, various attempts have been made inthe polishing method to improve the abrasive properties of the materialto be polished. Among them, there have been various attempts withrespect with grooves for remaining abrasive slurry on the polishingsurface and discharging it.

In Japanese Patent No. 2647046, a polishing pad comprising grooves forflowing abrasive formed in the inner portion and the outer portion ofthe surface of the polishing pad, and a plurality of pores for retainingthe abrasive formed on the surface of the polishing pad other than theportion that the grooves are formed, is disclosed. As one embodiment ofthe polishing pad, the polishing pad comprising lattice pattern grooveformed in the center portion and the peripheral portion of the surfaceof the polishing pad, and pores formed in a portion between centerportion and the peripheral portion, is described in FIG. 1. The poresare formed in broad area at once by using punches arranged in a line ora few lines. It is difficult to form the pores by using a processingapparatus generally used for that purpose. The technical effects ofreducing the unusual retainment of the abrasive slurry based on thebalance between feeding and discharging the abrasive slurry are notparticularly disclosed. The term “unusual retainment” used herein meansthat the retainment of the abrasive slurry is in largely non-uniformstate on the polishing surface of the polishing pad, which has a badeffect on polishing a material to be polished.

In Japanese Patent Kokai Publication No. 249710/1998, a polishing padcomprising grooves formed such that the groove shape geometricallyhaving a center is eccentric to the polishing pad. It is described todissolve a problem of transferring the groove shape to a silicon waferprocessed to degrade the uniformity by the eccentricity of concentriccircular groove to the polishing pad. However, it is difficult toprevent the abrasive rate in the center portion of the wafer fromdegrading. In addition, the technical effects of reducing of the unusualretainment of the abrasive slurry based on the balance between feedingand discharging the abrasive slurry are not particularly disclosed.

In Japanese Patent Kokai Publication No. 70463/1999, a polishing padcomprising a first zone having plural concentric circular grooves and asecond zone having a second pitch. It is described that the polishingpad has two zones having a different groove pitch to improve theuniformity of the polishing. However, the technical effects of reducingof the unusual retainment of the abrasive slurry based on the balancebetween feeding and discharging the abrasive slurry are not particularlydisclosed, and it is difficult to improve the uniformity of thepolishing.

In Japanese Patent Kokai Publication No. 198061/2000, a polishing padcomprising plural loop grooves and plural stream-lined grooves isdisclosed. In the polishing pad, it is attempted to positively controlthe flow of the abrasive slurry by forming the grooves into thestream-lined shape. However, in the polishing pad, it is problem thatthe abrasive slurry necessary to polishing flows out along thestream-lined grooves. In addition, the technical effects of reducing ofthe unusual retainment of the abrasive slurry based on the balancebetween feeding and discharging the abrasive slurry are not particularlydisclosed, and the uniformity of the polishing is not sufficientlyobtained.

In Japanese Patent Kokai Publication No. 224950/2002, a polishing padcomprising grooves having arc shaped bottom to prevent the abrasiveslurry from stagnating. In the polishing pad, it is attempted to controlthe flow of the abrasive slurry smoothly by forming the grooves into thearc bottom shape. In the polishing pad, the shape of the groove and thesurface roughness thereof are considered. However, it is different fromthe present invention in view that the polishing surface material isround graphite cast iron. In addition, it is different from the presentinvention in view that the material to be polished is bare wafer orglass substrate. Moreover, the unusual retainment of the abrasive slurrybased on the balance between feeding and discharging the abrasive slurryare not discussed in case of using porous material as the polishinglayer as described in the present invention.

In Japanese Patent Kokai Publication No. 9156/2004, a polishing padcomprising grooves, of which the inner surface has a surface roughnessof not more than 20 μm, on the polishing surface. In the polishing pad,the surface roughness of the inner surface of the groove is considered.The surface roughness of the groove is obtained for the groove formed bycutting the polishing surface material or molding it in a mold. It hasbeen found from an additional test by the present inventors that it isdifficult for the inner surface of the groove to have the surfaceroughness of not more than 20 μm in case of forming the groove on thepore material by the above method. Therefore, a main object of theinvention is the select of the polishing layer material rather than amethod of forming grooves, which is different from the presentinvention. In addition, the unusual retainment of the abrasive slurrybased on the balance between feeding and discharging the abrasive slurryare not discussed in case of using porous material as the polishinglayer as described in the present invention.

In order to dissolve the problems, a polishing pad for processingsemiconductor device that concentric circular grooves having right-angleedge are formed at the upper edge portion of the groove and grooveprocessing tool are disclosed in Japanese Patent Kokai Publication Nos.181649/2001 and 184730/2002, and a fine groove processing machine,processing tool and method of processing for forming concentric circulargrooves or lattice pattern groove on semiconductor polishing pad for CMPprocessing are disclosed in Japanese Patent Kokai Publication No.11630/2002.

In the polishing pad disclosed in Japanese Patent Kokai Publication Nos.181649/2001 and 184730/2002, it is easy to control the flow of theabrasive slurry between the device surface to be polished and the uppersurface of the pad by forming concentric circular grooves havingright-angle edges at the upper corner portion in cross section andadjusting the width, depth and pitch of the groove to specified ranges,and it is expected that hydroplaning is restrained and the soft metalsurface of the device is effectively planarized by the CMP processingmethod. However, the cross section shape of the groove is not stable,and the flowability of the abrasive slurry varies every pad. Therefore,stable abrasive properties are not sufficiently obtained.

In the polishing pad comprising fine grooves formed by the grooveprocessing tool disclosed in Japanese Patent Kokai Publication No.11630/2002, the cross section shape of the groove is not stable, and theflowability of the abrasive slurry varies every pad. Therefore,scratches are easily formed, and stable abrasive properties are notsufficiently obtained.

In the above polishing pad disclosed in Japanese Patent KokaiPublications Nos. 181649/2001, 184730/2002 and 11630/2002, edges at thecorner portion in cross section of the groove is right-angle byspecifying the shape of the cutting edge of the groove processing tool,thereby it is attempted to restrain the occurrence of dulled edge andburr on the wall surface of the groove. Stable abrasive properties arenot sufficiently obtained only by specifying the shape of the cuttingedge of the groove processing tool.

DISCLOSURE OF INVENTION Objects of the Invention

A main object of the present invention is to dissolve problems at thesame time, such as the occurrence of scratches, the non-uniformity ordeterioration of the abrasive rate, the non-uniformity within wafer ofthe abrasive amount, the consumption of excess abrasive slurry and thesuitable retainment of the abrasive slurry between the material to bepolished and the polishing pad in a polishing pad used for planarizinginter layer dielectrics and the like by CMP (chemical mechanicalpolishing) in the manufacturing process of a semiconductor device, amethod of producing the polishing pad and a method of producing asemiconductor device by using the polishing pad.

By dissolving the problems at the same time, the present inventionprovides a polishing pad used for planarizing inter layer dielectricsand the like by CMP (chemical mechanical polishing) in the manufacturingprocess of a semiconductor device, a method of producing the polishingpad and a method of producing a semiconductor device by using thepolishing pad.

The polishing pad of the present invention is suitably used as apolishing pad used for planarizing a material to be polished by CMP(chemical mechanical polishing) in order to dissolve problems at thesame time, such as the occurrence of scratches, the non-uniformity ordeterioration of the abrasive rate, the non-uniformity within wafer ofthe abrasive amount, the consumption of excess abrasive slurry and thesuitable retainment of the abrasive slurry between the material to bepolished and the polishing pad. In order to dissolve the problems at thesame time, the polishing pad of the present invention is a polishing padcomprising grooves on a polishing surface and formed from a foamedpolyurethane, of which a processed surface of the groove comprising aside surface and a bottom surface has a surface roughness Ra of not morethan 10.

The present invention relates to a semiconductor wafer polishing padcomprising grooves on a polishing surface and formed from a foamedpolyurethane, wherein a processed surface of the groove comprising aside surface and a bottom surface has a surface roughness Ra of not morethan 10.

In order to put the present invention into a more suitable practicalapplication, it is preferable that the processed surface of the groovehave a surface roughness Ra of 1 to 9.

In another embodiment, the present invention relates to a semiconductorwafer polishing pad comprising a polishing layer, wherein the polishinglayer is formed from a porous material, a polishing surface of thepolishing layer has grooves, and at least one portion of the innersurface of the groove has a non-porous surface.

In order to put the present invention into a more suitable practicalapplication, it is preferable that:

-   -   the non-porous surface have a center line average roughness Ra        of a roughness curve of 1.0 to 5.0 μm;    -   the groove have a depth of 0.5 to 1.5 mm;    -   the polishing layer be formed from a porous material having an        average cell diameter of 20 to 70 μm;    -   the wherein the polishing layer have a specific gravity of 0.5        to 1.0 g/cm³;    -   the polishing layer have a compressibility of 0.5 to 5.0%;    -   the polishing layer have a hardness of 45 to 65; and    -   the polishing pad further comprise a cushion layer and the        cushion layer have lower hardness than the polishing layer.

In further embodiment, the present invention relates to a method ofproducing a semiconductor wafer polishing pad comprising a step ofmechanical cutting by stepwise varying a feed speed and feed amount of agroove processing tool to form concentric circular grooves havingrectangle sectional shape on the polishing surface.

In order to put the present invention into a more suitable practicalapplication, it is preferable that:

-   -   the step of forming the grooves comprise stopping the feed of        the groove processing tool for a certain time at the position        that the groove processing tool reaches a desired depth;    -   the feed speed and feed amount of a groove processing tool are        stepwise varied and increased in order of precedence; and    -   the polishing pad be formed from a foamed polyurethane.

In yet further embodiment, the present invention relates to a method ofproducing a semiconductor device comprising a step of polishing thesurface of a semiconductor wafer by using the polishing pad of thepresent invention.

In the polishing of the semiconductor wafer and the like by using thepolishing pad of the present invent, it is possible to dissolve problemsat the same time, such as the non-uniformity or deterioration of theabrasive rate, the non-uniformity within wafer of the abrasive amount,the consumption of excess abrasive slurry and the suitable retainment ofthe abrasive slurry between the material to be polished and thepolishing pad; and particularly it is effective to reduce the occurrenceof scratches because the polishing pad has good balance between feedingand discharging the abrasive slurry during polishing to reduce theunusual retainment of the abrasive slurry in the grooves duringpolishing. Therefore, the polishing pad is effective to themanufacturing process of a semiconductor device, such as CMP of asemiconductor wafer.

BRIEF DESCRIPTION OF DRAWINGS

The present invention will become more fully understood from thedetailed description given hereinbelow and the accompanying drawingwhich is given by way of illustration only, and thus are not limitativeof the present invention, and wherein:

FIG. 1 is a schematic cross section illustrating a polishing apparatusgenerally used for CMP process.

FIG. 2 is a schematic cross section illustrating groove havingrectangular cross section shape.

FIG. 3 is a schematic cross section illustrating one embodiment of thegroove formed on the polishing layer of the polishing pad of the presentinvention.

FIG. 4 is a schematic cross section illustrating the groove formed onthe polishing layer of the conventional polishing pad.

FIG. 5 is an enlarged schematic diagram illustrating one embodiment ofthe cutting edge of the groove processing tool used for the method ofproducing the polishing pad of the present invention [(a) frontelevational view, (b) side elevational view].

FIG. 6 is an enlarged schematic diagram illustrating the cutting edge ofthe groove processing tool used for the method of producing theconventional polishing pad [(a) front elevational view, (b) sideelevational view].

FIG. 7 is an enlarged schematic diagram of the corner portion of thecutting edge of the groove processing tool before and after polishingillustrating the test method of the wear of the groove processing tool.

DESCRIPTION OF NOTATIONS

-   -   1: Polishing pad    -   2: Polishing platen    -   3: Abrasive slurry    -   4: Material to be polished    -   5: Supporting stand    -   6,7: Rotating shaft    -   8: Abrasive slurry-feeding mechanism    -   10,20: Groove    -   11,21: Side surface of processed surface of groove    -   12,22: Bottom surface of processed surface of groove    -   13: Depth of groove    -   14: Width of groove    -   15: Pitch of groove    -   23: Blister

BEST MODE FOR CARRYING OUT THE INVENTION

The polishing pad of the present invention comprises grooves on apolishing surface and formed from a foamed polyurethane, wherein aprocessed surface of the groove comprising a side surface and a bottomsurface has a surface roughness Ra of not more than 10. In anotherembodiment, the polishing pad of the present invention comprises apolishing layer, wherein the polishing layer is formed from a porousmaterial, a polishing surface of the polishing layer has grooves, and atleast one portion of the inner surface of the groove has a non-poroussurface. In addition, the method of producing the polishing pad of thepresent invention comprises a step of mechanical cutting by stepwisevarying a feed speed and feed amount of a groove processing tool to formconcentric circular grooves having rectangle sectional shape on thepolishing surface. The polishing pad of the present invention and themethod of producing the same will be explained with reference to theaccompanying drawing in detail. FIG. 3 is a schematic cross sectionillustrating one embodiment of the groove formed on the polishing layerof the polishing pad of the present invention. FIG. 4 is a schematiccross section illustrating the groove formed on the polishing layer ofthe conventional polishing pad. The drawings are schematic crosssections illustrating the groove formed on the polishing layer of thepolishing pad, and the size is not exactly shown.

As shown in FIG. 3, in the polishing pad of the present invention, it isrequired for the processed surface of the groove comprising the sidesurface 11 and bottom surface 12 to have a surface roughness Ra of notmore than 10, preferably 1 to 9, more preferably 1 to 5. When thesurface roughness Ra is larger than 10, the flowability of the abrasiveslurry is degraded, and cohesion thereof easily occurs or the cloggingof abrasive waste easily occurs, which causes the formation ofscratches.

It is desired that defects having a depth of not less than 100 μm (100to 500 μm) or burrs having a length of 200 μm (200 to 1000 μm) are notmore than 2 per one cross section in the groove in the polishing surfaceof the polishing pad of the present invention. When the number of thedefects or burrs are larger than 2, the flowability of the abrasiveslurry is degraded, and cohesion thereof easily occurs or the cloggingof abrasive waste easily occurs, which causes the formation ofscratches. The number of the defect and burr are measured by observingthe groove cross section of a sample formed by dividing the polishingpad into five pieces in the radius direction to count the number ofdefects having the above depth and burrs having the above length.

FIG. 5 is an enlarged schematic diagram illustrating one embodiment ofthe cutting edge of the groove processing tool used for the method ofproducing the polishing pad of the present invention. FIG. 6 is anenlarged schematic diagram illustrating the cutting edge of the grooveprocessing tool used for the method of producing the conventionalpolishing pad. As shown in FIG. 5, in the method of the polishing pad ofthe present invention, the grooves are formed by mechanical cutting withthe groove processing tool and the concentric circular groove havingrectangle sectional shape are formed on the polishing surface. It isdesired that the sectional shape of the cutting edge of the grooveprocessing tool used for the method of producing the polishing pad ofthe present invention be rectangle without the side relief angle c inthe conventional groove processing tool shown in FIG. 6. When the grooveprocessing tool having the side relief angle c is used, the width of thegroove formed is small by the wear of the groove processing tool (FIG.4), and the non-uniformity of the retaining amount of the abrasiveslurry is not sufficiently obtained, which causes the non-uniformity anddeterioration of the abrasive rate. In the side shape of the cuttingedge of the groove processing tool, when the groove processing toolhaving the rake angle d in the conventional groove processing tool shownin FIG. 6 is used, the contact area of the groove processing tool withthe polishing surface to be processed varies by the wear of the grooveprocessing tool, and the desired surface roughness Ra of the grooveprocessed surface is not sufficiently obtained (FIG. 4). Therefore, itis desired for the groove processing tool used for the method ofproducing the polishing pad of the present invention to have the cuttingedge shape without the side relief angle c and the rake angle d as shownin FIG. 5.

In the method of producing the polishing pad of the present invention,it is required to mechanically cut while stepwise varying a feed speedand feed amount of a groove processing tool. The wording “stepwisevarying” a feed speed and feed amount of a groove processing tool usedherein refers to stepwise vary the feed speed and feed amount whileforming one of concentric circular grooves. The value of the feed speedand the like at every step may be increased in order of precedence,decreased in order of precedence, or increased or decreased. The time atevery step may be the same or different.

It is desired for the feed speed of a groove processing tool to bewithin the range of 0.01 to 0.10 m/min, preferably 0.01 to 0.08 m/min,more preferably 0.01 to 0.05 m/min and to be varied at 1 to 2 steps,preferably 2 to 3 steps, more preferably 2 to 5 steps while forming oneof concentric circular grooves. When the feed speed is smaller than 0.01m/min, the processing time is increased and the wear of the grooveprocessing tool is accelerated. On the other hand, when the feed speedis larger than 0.10 m/min, the occurrence of the burr is increased, theload applied to the groove processing tool is increased and the grooveshape is not stable.

When forming the groove at a constant low feed speed, the wear of thegroove processing tool is large and the processing time is increased.Therefore, it is desired that the feed speed is increased in order ofprecedence. In addition, it is desired that there be a time of stoppingthe feed of the groove processing tool, that is, a time that the feedspeed is zero at the position of reaching the groove processing tool tothe deepest portion, that is, the desired groove depth. It is desiredfor the time of stopping the feed of the groove processing tool to bewithin the range of 0.5 to 5 seconds, preferably 1.0 to 3.0 seconds.When the time is longer than 5 seconds, the wear of the grooveprocessing tool is large. On the other hand, when the time is shorterthan 0.5 seconds, it is difficult to maintain the stable groove shapeand surface state.

The feed amount of the groove processing tool is stepwise varied bystepwise varying the feed speed as described above. In addition, it isdesired to stepwise vary the total feed amount of the groove processingtool, which varies depending on the desired groove depth, as the same asthe feed speed.

As described above, in the method of producing the polishing pad of thepresent invention, the processed surface of the groove can have lowsurface roughness Ra of not more than 10 and the burr formed on thesurface of the polishing pad by the groove processing is reduced to formconcentric circular grooves having the desired rectangle sectionalshape. When the roughness Ra of the processed surface of the groove islarge, the flowability of the abrasive slurry and abrasive waste isdegraded, which causes the formation of scratches as described above. Asshown in FIG. 3, the burr formed on the surface of the polishing pad bygroove processing is reduced to obtain grooves having right-angle edgeat the upper edge portion of the groove using the method of producingthe polishing pad of the present invention. In addition, the anglebetween the side surface 11 and bottom surface 12 is right-angle, and itis possible to stably form the grooves having precise rectanglesectional shape. Therefore, in the polishing pad obtained by the methodof producing the polishing pad of the present invention, the shape ofthe groove formed on the polishing surface is stable, and the retainingamount of the abrasive slurry is stable. Therefore, the problems, suchas the non-uniformity or deterioration of the abrasive rate, thenon-uniformity within wafer of the abrasive amount and the consumptionof excess abrasive slurry, are dissolved. In addition, the suitableretainment of the abrasive slurry between the material to be polishedand the polishing pad can be obtained.

In the polishing pad of the present invention, the width, depth andpitch of the groove are not limited as long as the grooves havingprecise rectangle sectional shape are stably formed, but the groove mayhave a width of 0.2 to 5.0 mm, a depth of 0.2 to 4.0 mm and a pitch of0.5 to 6.0 mm, which may be suitably selected from the ranges dependingon the material to be polished, the method of polishing and polishingcondition. In the present invention, the concentric circular groovespreferably have the same width, the same depth and the same pitch,respectively. In case of using such polishing pad, it is easy to controlthe abrasive rate, and it is convenient during producing the polishingpad.

The polishing pad of the present invention may be a single-layeredpolishing pad, which has been conventionally used, or a laminatedpolishing pad comprising at least two layers of polishing layer (hardsurface layer) contact with the material to be polished, such as asemiconductor wafer and an cushion layer (elastic supporting layer)positioned between the polishing layer and a polishing platen, or amulti-layered polishing pad.

In the laminated polishing pad, the polishing layer and cushion layerare separately formed. It is desired for the polishing layer to have ahardness of 45 to 65. When the hardness of the polishing layer is lowerthan 45, the planarity of the material to be polished is degraded. Onthe other hand, when the hardness of the polishing layer is higher than65, the planarity is good, but the uniformity of the material to bepolished is degraded. The hardness of the polishing layer was measuredaccording to JIS K6253-1997. The material for the polishing layer wascut into a size of 2 cm×2 cm (a proper thickness) as a sample formeasuring the hardness, and the sample was left at a temperature of 23°C.±2° C. and humidity of 50%±5% for 16 hours. The hardness of thepolishing layer was measured by using a stack of the samples having athickness of not less than 6 mm with a hardness meter (Asker D hardnessmeter manufactured by Kobunshi Keiki Co., Ltd.). It is desired for thecushion layer to have a hardness of 25 to 100, preferably 30 to 85. Thehardness of the cushion layer was measured with a hardness meter (AskerA hardness meter manufactured by Kobunshi Keiki Co., Ltd.) according toJIS K6253-1997. It is desired for the polishing layer to have athickness of 0.2 to 4.0 mm, preferably 0.8 to 3.0 mm. It is desired forthe cushion layer to have a thickness of 0.5 to 2.5 mm, preferably 1.0to 2.0 mm.

In the single-layered polishing pad, the thickness is 1.0 to 5.0 mm andthe material thereof may be suitably selected and used from the materialused for the polishing layer and cushion layer.

In the laminated polishing pad, a material for the polishing layer isnot limited as long as it satisfies the above hardness range, but thepolishing layer is preferably formed from porous material. Examples ofthe porous materials include, for example, polyurethane resin, polyesterresin, polyamide resin, acrylic resin, polycarbonate resin,halogen-based resin (such as polyvinyl chloride,polytetrafluoroethylene, and polyvinylidene fluoride), epoxy resin,photosensitive resin and the like. The porous material may be usedalone, but the porous material may be used in combination with at leastone of the other porous material.

In the present invention, particularly preferred is foamed polyurethaneresin as the material for the polishing layer, because the polyurethaneresin has excellent wear resistance and polymer having a desiredphysical properties can be easily obtained by varying a composition ofraw material.

A method of foaming the polyurethane resin is not limited, but includeschemical foaming method using a foaming agent, mechanical foamingmethod, a method of adding hollow micro beads or precursor forminghollow micro beads by heating, or combinations thereof. Micro foam usedfor the polishing pad of the present invention is formed by the foamingmethod.

The polyurethane resin comprises isocyanate-terminated urethaneprepolymer and chain extender. The isocyanate-terminated urethaneprepolymer comprises polyisocyanate, low molecular weight polyol andhigh molecular weight polyol.

Examples of the polyisocyanates, which are not limited, include 2,4-and/or 2,6-diisocyanato toluene, 2,2′-, 2,4′- and/or 4,4′-diisocyanatodiphenylmethane, 1,5-naphthalene diisocyanate, p- and m-phenylenediisocyanate, dimeryl diisocyanate, xylylene diisocyanate,diphenyl-4,4′-diisocyanate, 1,3- and 1,4-tetramethylxylydenediisocyanate, tetramethylene diisocyanate, 1,6-hexamethylenediisocyanate, dodecamethylene diisocyanate, cyclohexane-1,3- and1,4-diisocyanate,1-isocyanato-3-isocyanatomethyl-3,5,5-trimethylcyclohexane (=isophoronediisocyanate), bis-(4-isocyanatocyclohexyl)methane (=hydrogenated MDI),2- and 4-isocyanatocyclohexyl-2′-isocyanatocyclohexylmethane, 1,3- and1,4-bis-(isocyanatomethyl)-cyclohexane,bis-(4-isocyanato-3-methylcyclohexyl)methane and the like. These may beused alone or in combination of two or more thereof. The polyisocyanatemay be suitably selected depending on the desired pot-life duringcasting and molding.

Examples of the high molecular weight polyols include hydroxy-terminatedpolyester, polycarbonate, polyester carbonate, polyether, polyethercarbonate, polyesteramide and the like. Preferred are polyether andpolycarbonate in view of good hydrolysis resistance, and preferred ispolyether in view of cost and melt viscosity. Examples of the polyetherpolyols include reaction products of starting compound having a reactivehydrogen atom with alkylene oxide, such as ethylene oxide, propyleneoxide, butylene oxide, styrene oxide, tetrahydrofuran, epichlorohydrin,or mixtures of these alkylene oxides. Examples of the starting compoundshaving a reactive hydrogen atom include water, bisphenol and divalentalcohol for preparing polyester polyol described later.

Examples of polycarbonates having a hydroxy group include reactionproducts of diols, such as 1,3-propanediol, 1,4-butanediol,1,6-hexanediol, diethylene glycol, polyethylene glycol, polypropyleneglycol and/or polytetramethylene glycol, with phosgene, diallylcarbonate (such as diphenyl carbonate) or cyclic carbonate (propylenecarbonate). Examples of polyester polyols include reaction products ofdivalent alcohol with dibasic dicarboxylic acid, but it is desired tohave larger distance between ester bonds in order to improve hydrolysisresistance. It is preferable that both the divalent alcohol and dibasicdicarboxylic acid have longer chain component.

Examples of divalent alcohols, which are not limited, include ethyleneglycol, 1,3- and 1,2-propylene glycol, 1,4- and 1,3- and 2,3-butyleneglycol, 1,6-hexane glycol, 1,8-octane glycol, neopentyl glycol,cyclohexanedimethanol, 1,4-bis-(hydroxymethyl)-cyclohexane,2-methyl-1,3-propanediol, 3-methyl-1,5-pentanediol,2,2,4-trimethyl-1,3-pentanediol, diethylene glycol, dipropylene glycol,triethylene glycol, tripropylene glycol, dibutylene glycol and the like.

Examples of the dibasic dicarboxylic acids include aliphatic,cycloaliphatic, aromatic and/or heterocyclic dibasic dicarboxylic acid,but preferred is aliphatic or cycloaliphatic dibasic dicarboxylic acidbecause it is required that the resulting NCO terminated prepolymer isliquid or low melt viscosity. If aromatic dibasic dicarboxylic acid isapplied, it is preferable to use in combination with aliphatic orcycloaliphatic dibasic dicarboxylic acid. Examples of the dicarboxylicacids, which are not limited, include succinic acid, adipic acid,suberic acid, azelaic acid, sebacic acid, phthalic acid, isophthalicacid, terephthalic acid, naphthalene dicarboxylic acid, cyclohexanedicarboxylic acid (o-, m-, p-), dimeric fatty acid (such as oleic acid)and the like. The polyester polyol may have a portion of carboxylterminated group. Lactones, such as ∈-caprolactone, or polyester ofhydroxycarboxylic acid, such as ∈-hydroxycapronic acid may be also used.

Number average molecular weight of the high molecular weight polyol isnot limited, but is preferably within the range of 500 to 2,000 in viewof the elastic properties of the resulting polyurethane. When the numberaverage molecular weight is lower than 500, the elastic properties ofthe resulting polyurethane resin is not sufficiently obtained, which isbrittle resin. Therefore, the polishing layer prepared from thepolyurethane resin is hard and brittle, which causes the formation ofscratches on the polishing surface of the material to be polished. Thepolishing pad from the polyurethane resin is easily worn, and it is notsuitable in view of life of the polishing pad. On the other hand, whenthe number average molecular weight is higher than 2,000, the resultingpolyurethane resin is soft, and the polishing layer prepared from thepolyurethane resin tends to have poor planarity.

Examples of low molecular weight polyols include divalent alcohols forpreparing polyester polyol described above. As the low molecular weightpolyols used for the present invention, it is preferable to use at leastone selected from the group consisting of diethylene glycol,1,3-butylene glycol, 3-methyl-1,5-pentanediol and 1,6-hexamethyleneglycol, or mixtures thereof. If ethylene glycol or 1,4-butylene glycolas low molecular weight polyols other than those used for the presentinvention is used, the reactivity is too high during casting andmolding, or the hardness of the resulting polyurethane molded polishingmaterial is too high, and the polishing material of the presentinvention is brittle or the surface of IC is easy to damage. On theother hand, if divalent alcohols having longer chain than1,6-hexamethylene glycol are used, suitable reactivity during castingand molding, or suitable hardness of the resulting polyurethane moldedpolishing material is sometimes obtained. However, the cost is too high,and it is not useful to use the divalent alcohols.

Since it is necessary to select the isocyanate component depending onthe desired pot-life during casting and molding and to lower the meltviscosity of the resulting NCO terminated prepolymer, the isocyanatecomponent is applied alone or in combination with two or more. Examplesthereof, which are not limited, include 2,4- and/or 2,6-diisocyanatotoluene, 2,2′-, 2,4′- and/or 4,4′-diisocyanato diphenylmethane,1,5-naphthalene diisocyanate, p- and m-phenylene diisocyanate, dimeryldiisocyanate, xylylene diisocyanate, diphenyl-4,4′-diisocyanate, 1,3-and 1,4-tetramethylxylydene diisocyanate, tetramethylene diisocyanate,1,6-hexamethylene diisocyanate, dodecamethylene diisocyanate,cyclohexane-1,3- and 1,4-diisocyanate,1-isocyanato-3-isocyanatomethyl-3,5,5-trimethylcyclohexane (=isophoronediisocyanate), bis-(4-isocyanatocyclohexyl)methane (=hydrogenated MDI),2- and 4-isocyanatocyclohexyl-2′-isocyanatocyclohexylmethane, 1,3- and1,4-bis-(isocyanatomethyl)-cyclohexane,bis-(4-isocyanato-3-methylcyclohexyl)methane and the like.

A ratio of the high molecular weight polyol to the low molecular weightpolyol is determined depending on the performance requirement of thepolishing layer prepared by using these polyols.

Examples of the chain extenders used for the present invention include,for example, organic diamine compounds. Examples of the organic diaminecompounds, which are not limited, include4,4′-methylene-bis(o-chloroaniline), 2,6-dichloro-p-phyenylenediamine,4,4′-methylene-bis(2,3-dichloroaniline),3,3′-dichloro-4,4′-diaminodiphenylmethane, chloroaniline-modifieddichlorodiaminodiphenylmethane, 1,2-bis(2-aminophenylthio)ethane,trimethylene glycol-di-p-aminobenzoate, 3,5-bis(methylthio)-2,6-toluenediamine and the like. The low molecular weight polyols described abovecan be used as the chain extenders. They may be used alone or incombination with two or more.

The ratio of the organic isocyanate, polyol and chain extender duringpreparing polyurethane resin can suitably change depending on molecularweight of each component and the desired properties of the polishinglayer formed therefrom. In order to obtain the polishing layer havingexcellent abrasive properties, it is desired that a ratio of number ofisocyanate group in the organic isocyanate to the total number offunctional groups (hydroxyl group and amino group) in the polyol andchain extender be within the range of 0.95 to 1.15, preferably 0.99 to1.10.

The polyurethane resin of the present invention can be produced by knownurethane-making techniques. The polyurethane resin may optionallycontain stabilizers such as antioxidants, surfactants, lubricants,pigments, fillers, antistatic agents, and the other additives.

In the polishing pad of the present invention, it is desired for thefoamed polyurethane for the polishing layer (that is, the porousmaterial for the polishing layer or micro fine foam for the polishingzone) to have an average cell diameter of not more than 70 μm,preferably 20 to 70 μm, more preferably 30 to 50 μm. When the averagecell diameter is out of the range, the planarity is not sufficientlyobtained. The planarity means smoothness in micro structure of thematerial to be polished, such as a semiconductor wafer. As a method ofmeasuring the average cell diameter in the foamed polyurethane, forexample, there is a method of measuring the diameter of the cells at aspecified area by using an image processing unit.

In the polishing pad of the present invention, it is desired for thefoamed polyurethane for the polishing layer to have a specific gravityof 0.5 to 1.0 g/cm³. When the specific gravity is lower than 0.5 g/cm³,the strength of the surface of the polishing layer (polishing zone) isreduced, and the planarity of the material to be polished, such as asemiconductor wafer is degraded. On the other hand, when the specificgravity is higher than 1.0 g/cm³, the number of the micro pore in thepolishing layer (polishing zone) is reduced, and the planarity is good,but the abrasive rate tends to be degraded. The specific gravity is aratio of a mass of a sample to a mass of pure water having the samevolume as the sample at a pressure of 1.01 bars and a temperature of 4°C. The specific gravity can be measured according to JIS Z8807.

In the polishing pad of the present invention, it is desired for thefoamed polyurethane for the polishing layer (polishing zone) to have ahardness of 45 to 65, preferably 40 to 60. When the hardness is lowerthan 45, the planarity of the material to be polished is degraded. Onthe other hand, when the hardness is higher than 65, the planarity isgood, but the uniformity within wafer tends to be degraded. Theuniformity means the uniformity of abrasive amount within the surface ofa silicon wafer.

In the polishing pad of the present invention, it is desired for thefoamed polyurethane for the polishing layer (polishing zone) to have acompressibility of 0.5 to 5.0%, preferably 0.5 to 3.0%. When thecompressibility is within the above range, both the planarity anduniformity can be sufficiently obtained. The compressibility isdetermined by using the following formula:

Compressibility(%)=[(T ₁ −T ₂)/T ₁]×100

wherein T₁ represents the thickness of a sample after application of 30kPa (300 g/cm²) stress for 60 seconds to the sample, and T₂ representsthe thickness of the sample after application of 180 kPa (1,800 g/cm²)stress for 60 seconds to the sample in the state T₁.

In the polishing pad of the present invention, it is desired for thefoamed polyurethane for the polishing layer (polishing zone) to have acompressibility recovery of 50 to 100%. When the compressibilityrecovery is out of the above range, the thickness of the polishing layeris largely changed by repeated loading from the material to be polished,and the stability of the abrasive properties is degraded.

In the polishing pad of the present invention, it is desired for thefoamed polyurethane for the polishing layer (polishing zone) to have astorage elastic modulus of not less than 200 MPa as measured by dynamicviscoelastic measurement at a temperature of 40° C. and a frequency of 1Hz. When the storage elastic modulus is less than 200 MPa, the strengthof the surface of the polishing layer is reduced, and the planarity ofthe material to be polished, such as a semiconductor wafer is degraded.The storage elastic modulus means elastic modulus measured by applyingsine wave vibration to the foam polyurethane as a sample with a tensilemode folder of a dynamic viscoelasticity spectrometer.

The method of preparing closed-cell type foamed polyurethane suitablyused in the polishing layer for the polishing pad of the presentinvention will be explained in detail hereinafter. The method ofpreparing the foamed polyurethane comprises the following steps (a) to(c).

(a) Stirring to prepare a cell dispersion of an isocyanate-terminatedprepolymer;

A silicone-based surfactant is added to an isocyanate-terminatedprepolymer and stirred in an inert gas, and the inert gas is dispersedas fine cells to form a cell dispersion. When the isocyanate-terminatedprepolymer is in a solid form at ordinary temperatures, the prepolymeris melted by pre-heating to a suitable temperature.

(b) Mixing a curing agent (chain extender);

A chain extender is added to, and mixed with, the cell dispersion understirring.

(c) Curing step

The isocyanate-terminated prepolymer mixed with the chain extender iscast in a mold, and heat-cured.

The inert gas used in production of the polyurethane resin foam is usedfor forming fine cells, and it is preferably not combustible. Examplesof the gases include nitrogen, oxygen, a carbon dioxide gas, a rare gassuch as helium and argon, and a mixed gas thereof, and the air dried toremove water is most preferable in view of cost.

As a stirrer for dispersing the inert gas in the silicone-basedsurfactant-containing isocyanate-terminated prepolymer to form finecells, well known stirrers can be used without particular limitation,and examples thereof include a homogenizer, a dissolver, a twin-screwplanetary mixer and the like. The shape of an agitator of the stirrer isnot particularly limited either, but a whipper-type agitator ispreferably used to form fine cells.

In a preferable embodiment, different stirrers are used in stirring forforming a cell dispersion in the stirring step and in stirring formixing an added chain extender in the mixing step, respectively. Inparticular, stirring in the mixing step may not be stirring for formingcells, and a stirrer not generating large cells is preferably used. Sucha stirrer is preferably a planetary mixer. The same stirrer may be usedin the stirring step and the mixing step, and stirring conditions suchas revolution rate of the agitator are preferably adjusted as necessary.

In the method of preparing the foamed polyurethane, heating andpost-curing of the foam obtained by casting the cell dispersion in amold and reacting it until the dispersion lost fluidity are effective inimproving the physical properties of the foam, and are extremelysuitable. The cell dispersion may be cast in a mold and immediatelypost-cured in a heating oven, and even under such conditions, heat isnot immediately conducted to the reactive components, and thus thediameters of cells are not increased. The curing reaction is preferablyconducted at normal pressures to stabilize the shape of cells.

In the preparation of the polyurethane resin, a well known catalystaccelerating polyurethane reaction, such as tertiary amine-basedcatalysts, organotin-based catalysts, may be used. The type and amountof the catalyst added are determined depending on flow time in castingin a predetermined shape mold after the mixing step.

The production of the foamed polyurethane may be in a batch system whereeach component is weighed and introduced into a vessel, or in acontinuous production system where each component and an inert gas arecontinuously supplied to and stirred in a stirring device and theresulting cell dispersion is provided to produce molded articles.

The polishing layer used for the polishing pad of the present inventioncan be produced by cutting a sheet of the foamed polyurethane resinprepared as described above into a predetermined size.

In the polishing pad of the present invention, it is desired for thepolishing layer to have a thickness, which is not limited, of 0.6 to 3.5mm. Examples of the methods of preparing the polishing layer having theabove thickness include a method of processing the foam block producedby the method described above to a given thickness by a slicer of bandsaw type or planer type; a method of casting resin in a mold comprisinga cavity having a given thickness to cure it; a method of using coatingtechnique or sheet molding technique; and the like.

It is desired for the polishing layer to have a variability of thicknessof not more than 100 μm, preferably not more than 50 μm. When thevariability of thickness is larger than 100 μm, the polishing layer haslarge crinkle, and portions having different contact state with thematerial to be polished are formed, which degrades the abrasiveperformance. In order to dissolve the variability of thickness of thepolishing layer, the surface of the polishing layer is dressed bydresser having abrasive grains of diamond electrodeposited or meltbonded thereon at initial stage of polishing. However, when thevariability of thickness is larger than the upper limit, dressing timeis long, which reduces the productive efficiency.

In addition, in order to restrain the variability of the thickness ofthe polishing layer, the surface of the polishing layer (zone) adjustedto a given thickness may be buffing treated. The buffing treatment ispreferably conducted stepwise by using abrasive sheets having differentparticle size.

In the polishing layer formed from the foamed polyurethane of thepresent invention, it is required to provide grooves on the polishingsurface (polishing zone) contact with a material to be polished topolish the material. The abrasive slurry provided during polishing thesemi-conductor device is effectively retained by the presence of thegrooves. The grooves also have a function of uniformly distributing theabrasive slurry on the polishing surface. In addition, the grooves alsohave a function of a path for briefly retaining abrasive waste, such asabrasive dust, used abrasive slurry, and smoothly discharging it to theexterior thereof. The grooves also prevent the material to be polishedfrom breaking by the absorption of the material to be polished to thepolishing layer.

The grooves on the surface of the polishing layer, of which the crosssection shape is not particularly limited, includes, for example,rectangular groove comprising side surfaces and bottom surface, U-shapedgroove, V-shaped groove and the like. FIG. 2 is a schematic crosssection illustrating grooves having rectangular cross section shape. Theside surface 11 and bottom surface 12 of the groove 10 shown in FIG. 2are inner surface of the groove. The term “inner surface of groove” usedherein refers to at least one surface of side surface and bottom surfaceof the groove. In case of U-shaped groove, it is difficult todistinguish between the side surface and bottom surface as the innersurface of the groove. In case of V-shaped groove, the inner surface ofthe groove comprises only the side surface.

In the polishing pad of the present invention, it is not necessary forthe whole inner surface of the groove to be non-porous surface. In caseof the groove having small depth and rectangular cross section shape,even if only the bottom surface of the groove is non-porous surface, itis considered that the technical effects accomplished by the presentinvention are sufficiently obtained. However, it is more preferable thatthe inner surface of the groove, which is at least one surface of theside surface and bottom surface of the groove, is a non-porous surfacein whole, because more excellent technical effects can be obtained.

The shape of the groove on the polishing surface of the polishing layeris not particularly limited, but includes, for example, round loop,polygonal loop (such as triangle loop, square loop, pentagon loop), ovalloop, and the like. The number of the groove is not particularly limitedas long as it is not less than 2. The arrangement of the grooves is notparticularly limited, but includes, for example, loop groovesconcentrically arranged, loop grooves eccentrically arranged, loopgrooves comprising one loop groove and the other grooves positioned in aportion surrounded by the loop groove on the polishing surface and thelike.

Among the loop grooves described above, loop grooves arranged in theform of concentric circles are preferable in view of abrasiveperformance and easiness of processing the groove.

There may be grooves having the other shape or recesses on the polishingsurface in addition to the loop grooves. The grooves having the othershape may be, for example, linear grooves arranged in the direction ofthe diameter on the polishing layer. The linear grooves may be arrangedin a lattice pattern. There may be perforations penetrated from thepolishing surface to the backside of the polishing layer in addition tothe grooves described above.

It is desired for the groove on the surface of the polishing layer tohave a width of 0.05 to 2.0 mm, preferably 0.20 to 0.50 mm. When thewidth of the groove is smaller than 0.05 mm, it is difficult to enterthe abrasive slurry in the groove, and the technical effects offunctioning as a flow path of the abrasive slurry are sufficientlyobtained, which degrades the abrasive rate. In addition, it is verydifficult to process the grooves having a width of smaller than 0.05 mm,and productivity is degraded. On the other hand, when the width of thegroove is larger than 2.0 mm, the polishing effective area of thepolishing surface of the polishing layer contact with the material to bepolished is reduced, and the abrasive rate is reduced. The abrasive rateis a parameter used for evaluating the abrasive properties.

In the present invention, it is desired for the groove to have a pitchof 0.1 to 20 mm. The pitch 15 is distance between the groove 14 formedand the other groove 14 as shown in FIG. 2. When the pitch of the grooveis smaller than 0.1 mm, many grooves are formed on the polishing pad,and the polishing effective area of the polishing surface of thepolishing layer contact with a semiconductor wafer as the material to bepolished is reduced, which reduces the abrasive rate. On the other hand,when the pitch of the groove is larger than 20 mm, the area of thepolishing surface of the polishing layer contact with the material to bepolished is increased, and the frictional resistance between thematerial to be polished and the polishing pad. Therefore, the materialto be polished removes from the polishing head (which is so-called“dechucking”). The pitch of the groove means a shortest distance betweenadjacent grooves.

It is desired for the groove to have a depth of not less than 0.5 mm,which is a distance from the polishing surface to the deepest portion ofthe bottom surface. When the depth of the groove is less than 0.5 mm,the balance between feeding and discharging the abrasive slurry is notsufficiently obtained, which is not preferable for polishing. The depthof the groove is preferably not more than 0.85 of the thickness of thepolishing layer having the polishing surface in view of the strength ofthe polishing pad. FIG. 2 is also a schematic cross section forillustrating the width 14, pitch 15 and depth 13 of the groove 10.

A method of forming the groove is not limited, but includes a method ofmechanical cutting using, for example, a cutting tool of a predeterminedsize, a method of casting resin in a mold having a given surface shapeand curing it, a method of pressing resin using a press plate having agiven surface shape, a method of forming the grooves byphotolithography, a method of forming the grooves by printing, a methodof forming the grooves by laser light using carbon dioxide laser and thelike. Preferred is the method of mechanical cutting.

The polishing pad formed from a porous material, such as foamedpolyurethane is excellent to polishing the semi-conductor device. Incase of forming the grooves on the porous material by the mechanicalcutting, “burr” or open pore is formed by cutting the pore portion areformed on the inner surface, such as the side surface and bottomsurface, of the groove. The used abrasive slurry and abrasive dust areeasily remained and accumulated by the presence of the hangnail or openpore on the inner surface of the groove. Thereby the groove is stoppedup, and the abrasive rate is reduced, a scratch occurs and theuniformity of polishing is not sufficiently obtained. Such polishing padis not durable to long time polishing.

In order to solve the problems described above, it is considered to usemethods of forming the groove, for example, by heat pressing, embossing,laser processing. The inner surface of the groove formed by the methodsis smooth surface without burr, but the inner surface has a drawback toeasily cause heat deterioration. The heat deterioration causes swellingof the groove, thermal hardening of the surface and the like, whichcause scratches. On the other hand, in case of forming the polishinglayer by non-foamed material, the groove having smooth inner surface canbe also formed by cutting and the like. However, the polishing layerformed from the non-foamed material tends to have poor retainability ofthe abrasive slurry. In addition, since the non-foamed material has nopore formed by foaming, the abrasive slurry and abrasive dust have noescape, which increases the formation of scratches.

The polishing pad of the present invention comprises the polishing layerformed from a porous material and the inner surface of the groove formedon the surface of the polishing layer has a non-porous surface. Thewording “the inner surface of the groove formed on the surface of thepolishing layer has a non-porous surface” means that the polishing layeris formed from a porous material, but the inner surface of the grooveformed on the polishing layer has smooth surface, which does not haveany pores. In case that the inner surface of the groove has a non-poroussurface, it is desired for the non-porous surface to have a center lineaverage roughness Ra of a roughness curve of 1.0 to 5.0 μm, preferably1.5 to 3.0 μm as a surface roughness. When the center line averageroughness Ra of a roughness curve is larger than 5.0 μm, the technicaleffects of reducing of the unusual retainment of the abrasive slurry arenot sufficiently obtained. On the other hand, it is difficult to preparethe non-porous surface having a center line average roughness Ra of aroughness curve of less than 1.0 μm based on the present technicallevel.

In the polishing pad of the present invention, since the polishingsurface has grooves and the inner surface of the groove has thenon-porous surface, it is possible to effectively restrain the cloggingof the groove from the residual abrasive slurry and the retainment ofthe abrasive dust even if the polishing layer is formed from porousmaterial. Therefore, it is possible to restrain the unusual retainmentof the abrasive slurry, and it is possible to prepare the polishing padhaving excellent long-term usability.

“A center line average roughness Ra of a roughness curve” used herein isa parameter according to JIS B 0601. The center line average roughnessRa of a roughness curve can be measured with an optical type surfaceroughness tester, such as a three-dimensional surface profiler, laserscanning microscope, electron beam surface profiler; a contact typesurface roughness tester, such as a surface roughness tester withcontact stylus; and the like.

A method of making the inner surface of the groove on the polishinglayer a non-porous surface includes a method of forming the groove bycutting and the like, and then processing the inner surface of thegroove to the non-porous surface by post processing. Examples of methodsof post processing include a method of irradiating a laser beam to thesurface portion of the inner surface of the groove by a laser processingmachine to melt it; a method of thinly applying a resin to the surfaceportion of the inner surface of the groove to level it; a method ofapplying a resin to the groove portion, and then newly forming a groove;and the like.

Examples of the resins used for the post processing include resins thatcan be used for preparing the polishing layer. The inner surface of thegroove can be treated to form the non-porous surface by applying theresin to the groove portion without the foaming treatment describedabove. Examples of methods of applying the resin to the groove portioninclude a method of coating the resin thermally melted thereto; a methodof preparing a resin solution by dissolving or dispersing the resin in asolvent, and then coating or spraying the resin solution thereto; amethod of applying polymerizable resin to the groove portion by coatingor spraying, and then post curing it; and the like.

The polishing layer of the polishing pad of the present invention isformed from the porous material. Therefore, in the polishing effectivearea portion, which is the polishing surface other than the grooveportion, that is, the groove pitch portion of the polishing layer, theporous surface is exposed. That is, the polishing surface has micropores.

The polishing pad of the present invention may be a single-layeredpolishing pad, which is composed of only a polishing layer, or alaminated polishing pad comprising at least two layers of the polishinglayer and a cushion layer positioned between the polishing layer and apolishing platen.

The polishing pad is preferably the laminated polishing pad comprisingthe polishing layer and the cushion layer. The cushion layer plays arole in compensating the properties of the polishing layer. The cushionlayer is required in order to accomplish both the planarity anduniformity within wafer, which are relation of a trade-off in the CMP.The planarity means smoothness in a pattern portion when a material tobe polished having micro unevenness formed during forming the pattern ispolished, the uniformity within wafer means uniformity in the wholematerial to be polished. The planarity is improves by the properties ofthe polishing layer, the uniformity within wafer is improves by theproperties of the cushion layer.

The hardness of the cushion layer is preferably lower than that of thepolishing layer, which improves the adaptability of the polishing layerto the whole wafer, and the uniformity of the polishing layer isimproved. It is desired for the cushion layer to have an Asker Ahardness of 20 to 40, preferably 25 to 35.

Examples of materials for forming the cushion layer, which are notlimited, but include a nonwoven fibrous fabric, such as polyesternonwoven fabric, nylon nonwoven fabric, acrylic nonwoven fabric; a resinimpregnated nonwoven fabric, such as polyester nonwoven fabricimpregnated with polyurethane; polymer resin foam, such as polyurethanefoam, polyethylene foam; rubbery resin, such as butadiene rubber,isoprene rubber; photosensitive resin; and the like.

A method of laminating the polishing layer to the cushion layer include,for example, a method of interposing a double-coated tape between thepolishing layer and the cushion, and then pressing it.

The double-coated tape comprises adhesive layers on the both surface ofa substrate, such as nonwoven fabric and film. It is desired to use thefilm as a substrate in order to prevent the abrasive slurry frompenetrating into the cushion layer. In addition, examples of thecompositions for the adhesive layer include rubber-based adhesive,acrylic-based adhesive and the like. In view of the metal ion content,preferred is the acrylic-based adhesive, because it has small content ofthe metal ion. Since the composition of the polishing layer may bedifferent from that of the cushion layer, each adhesive layer of thedouble-coated tape can have different composition and adjust theadhesion of the each adhesive layer to suitable range.

The polishing pad obtained as described above is mounted on thepolishing platen by bonding with a double-coated tape, and the surfaceof semi-conductor wafer can be polished. The double-coated tapecomprises adhesive layers on the both surface of a substrate, such asnonwoven fabric and film as described in the double-coated tape forbonding the polishing layer to the cushion layer. Since the polishingpad is removed from the platen after polishing, it is desired to use thefilm for the substrate, because it is possible to prevent the tape fromremaining on the polishing platen. The same compositions for theadhesive layer as that of the double-coated tape for bonding thepolishing layer to the cushion layer can be used.

Semi-conductor device is produced through the step of polishing thesurface of semi-conductor wafer by using the polishing pad of thepresent invention. The semi-conductor wafer is generally formed bydepositing wire metal and oxide film on silicon wafer. A method ofpolishing the semi-conductor wafer and polishing apparatus used for themethod are not limited, but the method is conducted by using thepolishing apparatus comprising, for example, a polishing platen forsupporting a polishing pad, a supporting stand (polishing head) forsupporting a material to be polished (such as a semi-conductor wafer), abacking for uniformly applying pressure to the wafer and an abrasiveslurry-feeding mechanism. The polishing pad is mounted on the polishingplaten by bonding with a double-coated tape. The polishing platen andsupporting stand are positioned such that the polishing pad andsemi-conductor wafer supported by the platen and the stand respectivelyare opposed to each other, and have an axis of revolution respectively.At the side of the supporting stand, a pressing mechanism for pushingthe semi-conductor wafer onto the polishing pad is provided. Duringpolishing, the semi-conductor wafer is pushed onto the polishing padwhile rotating the polishing platen and supporting stand, and thepolishing is conducted while feeding the abrasive slurry. Feed of theabrasive slurry, polishing load, revolution number of the polishingplaten and revolution number of the semi-conductor wafer, which are notlimited, are adjusted to suitable range.

Thereby, a projective portion on the surface of the material to bepolished, such as the semi-conductor wafer, is smoothly polished. Afterthe polishing, dicing, bonding, packaging and the like are conducted,and semi-conductor device is produced. The semi-conductor device is usedfor processor, memory and the like.

EXAMPLES

Hereinafter, the present invention is described in more detail byreference to the Examples, but the present invention is not limited bythe Examples.

(Average Cell Diameter)

In measurement of average cell diameter, the material, such as thepolishing layer was cut into a thickness of about 1 mm parallel to thelayer with a microtome cutter as a sample for measuring the average celldiameter. The sample was mounted on a slide glass, and the diameter ofthe all cells was measured at an optional 0.2 mm×0.2 mm square area byusing an image processing unit (Image Analyzer V10 manufactured byTOYOBO Co., Ltd.) to calculate the average cell diameter.

(Specific Gravity)

The specific gravity was measured according to JIS Z8807-1976. Thematerial, such as the polishing layer was cut into a strip sized of 4cm×8.5 cm (a proper thickness) as a sample for measuring the specificgravity, and the sample was left at a temperature of 23° C.±2° C. andhumidity of 50%±5% for 16 hours. The specific gravity was measured byusing a hydrometer (Sartorius K.K.).

(Hardness)

(1) Hardness of Polishing Layer

The hardness was measured according to JIS K6253-1997. The material forthe polishing layer was cut into a size of 2 cm×2 cm (a properthickness) as a sample for measuring the hardness, and the sample wasleft at a temperature of 23° C.±2° C. and humidity of 50%±5% for 16hours. The hardness was measured by using a stack of the samples havinga thickness of not less than 6 mm with a hardness meter (Asker Dhardness meter manufactured by Kobunshi Keiki Co., Ltd.).

(2) Hardness of Cushion Layer

The hardness was measured according to JIS K6253-1997. The material forthe cushion layer was cut into a size of 2 cm×2 cm (a proper thickness)as a sample for measuring the hardness, and the sample was left at atemperature of 23° C.±2° C. and humidity of 50%±5% for 16 hours. Thehardness was measured by using a stack of the samples having a thicknessof not less than 6 mm with a hardness meter (Asker A hardness metermanufactured by Kobunshi Keiki Co., Ltd.).

(Compressibility)

The material for the polishing layer, which cut into disk having adiameter of 7 mm (a proper thickness), was used as a sample formeasuring the compressibility, the sample was left at a temperature of23° C.±2° C. and humidity of 60%±10% for 40 hours. The compressibilitywas measured by using TMA (SS6000; manufactured by Seiko Instruments).The compressibility is determined by using the following formula:

Compressibility(%)=[(T ₁ −T ₂)/T ₁]×100

wherein T₁ represents the thickness of a sample after application of 30kPa (300 g/cm²) stress for 60 seconds to the sample, and

T₂ represents the thickness of the sample after application of 180 kPastress for 60 seconds to the sample in the state T₁.

(Compression Recovery)

The material for the polishing layer, which cut into disk having adiameter of 7 mm (a proper thickness), was used as a sample formeasuring the compression recovery, the sample was left at a temperatureof 23° C.±2° C. and humidity of 60%±10% for 40 hours. Thecompressibility was measured by using TMA (SS6000; manufactured by SeikoInstruments). The compressibility is determined by using the followingformula:

Compression recovery(%)=(T ₃ −T ₂)/(T ₁ −T ₂)×100

wherein T₁ represents the thickness of a sample after application of 30kPa (300 g/cm²) stress for 60 seconds to the sample,

T₂ represents the thickness of the sample after application of 180 kPastress for 60 seconds to the sample in the state T₁, and

T₃ represents the thickness of the sample after no loaded state for 60seconds and then application of 30 kPa (300 g/cm²) stress for 60 secondsto the sample in the state T₂.

(Storage Elastic Modulus)

A 3 mm×40 mm rectangular sample (a proper thickness) was cut out andused as a sample for measurement of dynamic viscoelasticity. Theaccurate width and thickness of each sheet after cutting were measuredusing a micro-meter. For measurement, a dynamic viscoelasticityspectrometer (manufactured by Iwamoto Seisakusho, now IS Giken) was usedto determine storage elastic modulus E′. Measurement conditions are asfollows:

measurement temperature, 40° C.;

applied strain, 0.03%;

initial loading, 20 g; and

frequency, 1 Hz.

[Evaluation of Abrasive Properties]

As the polishing apparatus, SPP600S manufactured by Okamoto Machine ToolWorks, Ltd. was used in evaluation of abrasive properties of theresulting polishing pad.

(Abrasive Rate)

The abrasive rate was determined by the calculation from a time untilpolishing 0.5 μm thickness of an oxide film from the oxide film formedon silicon wafer having a diameter of 8 inches. The thickness of anoxide film was measured by an interference film thickness measuringdevice manufactured by Otsuka Denshisha. The polishing conditions wereas follows: silica slurry SemiSperse-12 (manufactured by Cabot) wasdropped at a flow rate of 150 mL/min., the polishing loading was 350g/cm², the number of revolutions of the polishing platen was 35 rpm, andthe number of revolutions of the wafer was 30 rpm.

(Planarity)

For evaluation of planarity, a 0.5 μm thermal-oxide film was depositedon a 8-inch silicon wafer and subjected to patterning, and a 1 μm oxidefilm p-TEOS (tetraethoxy silane) was further deposited thereon, toprepare a wafer having a pattern with an initial difference in level of0.5 μm. This wafer was polished under the above-described conditions,and each difference in level was measured to evaluate the planarity. Theplanarity was determined by measuring the two differences in level. Oneis a local difference in level, which is level difference in the patternwhere lines having a width of 270 μm were spaced at 30 μm, that is, thedifference in level after 1 minute from polishing. The other is theabrasive amount in 270 μm space when the global difference in levelbetween tops of lines in two patterns, which are a pattern where lineshaving a width of 270 μm is spaced at 30 μm and a pattern where lineshaving a width of 30 μm is spaced at 270 μm, was reduced to 2000 Å orless was measured to evaluate the planarity. The smaller the localdifference in level, the higher the speed of planarizing unevenness ofthe oxide film formed depending to the pattern on the wafer within acertain time. The smaller the abrasive amount in the space, the smallerthe abrasive amount of the portion not to be polished, and it is shownthat the planarity is excellent.

(Uniformity within Wafer)

After polishing, the thickness of the film was measured at 25 points onthe polished surface of a silicon wafer. The maximum thickness Tmax andminimum thickness Tmin of the film were used to calculate uniformity (%)according to the following equation:

Uniformity Within Wafer(%)=(Tmax−Tmin)/(Tmax+Tmin).×100

The smaller the value of the uniformity is, the higher the uniformitywithin the surface of the silicon wafer is.

(Number of Scratch)

Number of scratches of not less than 0.5 μm on the wafer after polishingwas measured with a wafer surface analyzer WM2500 manufactured by TopconCorporation

(Surface Roughness Ra)

The inner surface portion of the groove formed on the polishing surfaceof the polishing layer was cut out as a test piece. The test pieceadhered on the glass platen with a wax. The center line averageroughness Ra of a roughness curve of the test piece on the glass platenwas measured as surface roughness according to JIS B 0633 with a surfaceprofiler P-15 manufactured by Tencor Corporation at the followingmeasuring condition.

-   -   Scan length: 2500 μm    -   Scan speed: 20 μm/sec    -   Stylus force: 2 mg    -   Stylus radius: 2.0 μm    -   Cone angle of stylus tip: 60 degree        Further 4 test pieces were prepared as described above, and the        center line average roughness Ra was measured as described        above. The average of the resulting 5 measured values was        determined, and the average is shown as the center line average        roughness Ra of a roughness curve as the surface roughness Ra.

(Sectional Shape of Groove)

The sectional shape of the groove was evaluated by using the followingevaluation criteria.

Evaluation Criteria

∘: An average of the groove width measured at three points in the depthdirection when observing the sectional shape of the groove is within thetarget range and the deviation of the three measuring points is not morethan 30 μm or not more than 10% of the target range. Therefore,rectangle sectional shape is obtained.

Δ: The average of the groove width is within the target range, but thedeviation is larger than 30 μm. Burrs is largely formed only at oneportion. The rectangle sectional shape is generally obtained and thedeviation of the three measuring points is not more than 30 μm, but theaverage of the groove width is slightly out of the target range.

x: The average of the groove width is out of the target range andrectangle sectional shape is not entirely obtained.

(Surface Burr)

Burr from the groove to the surface in the sectional surface, in whichthe sectional shape of the groove was measured, was evaluated by usingthe following evaluation criteria.

Evaluation Criteria

∘: Not more than 80 μm

Δ: From 80 to 100 μm

x: Not less than 100 μm

(Wear of Groove Processing Tool)

After processing the groove by using the groove processing tool, ofwhich the cutting edge was newly polished, the wear state of the cuttingedge of the groove processing tool was evaluated. The R of the cornerportion of the cutting edge shown in FIG. 7 was measured (by using ascanning electron microscopy SEM or microscope), and the wear of thegroove processing tool was evaluated by using the following evaluationcriteria.

Evaluation Criteria

∘: R=0 to 0.20 mm and the corner portion of the cutting edge is notnicked.

Δ: R=0.20 to 0.30 mm and the corner portion of the cutting edge isslightly nicked.

x: R=not less than 0.30 mm and the corner portion of the cutting edge islargely nicked.

Example 1 Preparation of Polishing Layer

100 parts by weight of a polyether-based urethane prepolymer (AdipreneL-325 manufactured by Uniroyal, NCO content: 2.22 meq/g) filtered and 3parts by weight of a silicone-based nonionic surfactant (SH192manufactured by Toray Dow Corning Silicone Co., Ltd.) were introducedinto a fluorine coated vessel and mixed, and the temperature wasmaintained to 80° C. The mixture was vigorously stirred for about 4minutes at about 900 rpm by using a fluorine coated stirrer withintroducing air into reaction process. 26 parts by weight of4,4′-methylene-bis(o-chloroaniline) (Ihara Cuamine MT manufactured byIhara Chemical Industry) previously melted at 120° C. and filtered wasintroduced thereto. After stirring for about 1 minute, the mixedreaction solution was introduced into a fluorine coated pan-type openmold. When the reaction solution did not flow, the mold was put in anoven and post-cured at 110° C. for 6 hours to produce a foamedpolyurethane resin block. This foamed polyurethane resin block wassliced by a slicer of band saw type (manufactured by Fecken) to obtain afoamed polyurethane resin sheet.

The sheet was buffing treated with a buff (manufactured by Amitec) toform a sheet having the desired thickness (sheet thickness: 1.27 mm).The buffing treated sheet for the polishing layer had an average celldiameter of 45 μm, a specific gravity of 0.86, a hardness of 53, acompressibility of 1.0%, a compression recovery of 65.0% and a flexuralmodulus of 275 MPa. The buffing treated sheet was punched into a diskhaving a diameter of 24 inches (610 mm), and concentric circular grooveshaving a depth of 0.8 mm, width of 0.25 mm and pitch of 1.5 mm wereformed on the surface of the sheet by using a surface groove processingmachine (Toho Engineering).

The resin used for the foamed polyurethane resin sheet was prepared asdescribed above without stirring with introducing air into reactionprocess, and then the resin was vacuum defoamed to prepare a resin usedfor post processing. The resulting resin was coated on the grooveportion in the uncured state, and cured by heat treatment. The curedresin portion was then cut as described above to form grooves again(post processing). The cutting was attentively conducted without cuttingall the coated resin. As a result, the polishing layer, of which boththe side surface and bottom surface as the inner surface of the groovewere non-porous surface, was prepared.

The inner surface of the groove before post processing had a center lineaverage roughness Ra of a roughness curve of 7 to 20 μm, and the innersurface of the groove after post processing had a center line averageroughness Ra of a roughness curve of 0.6 to 1.0 μm.

A double-coated tape (double-tack tape manufactured by Sekisui ChemicalCo., Ltd.) adhered to the opposite side of the groove processed surfaceof the polishing layer sheet by using a laminator.

Production of Polishing Pad

A polyethylene foam (Toray PEF manufactured by Toray Industries, Inc.)(thickness, 0.8 mm) having a surface brushed with a buff and subjectedto corona treatment as a cushion layer was laminated to the adhesivesurface of the double-coated tape on the polishing layer by using alaminator. In addition, a double-coated tape adhered to the oppositeside of the cushion layer by using a laminator to prepare a polishingpad.

The abrasive properties of the resulting polishing pad were measured orevaluated. As a result, a silicon wafer polished by using the polishingpad had a few scratches and good uniformity, and the polishing pad hadgood stability of polishing the silicon wafer for a long time of notless than 40 hours such that abrasive dust and abrasive slurry were notunusually remained in the grooves.

Comparative Example 1

100 parts by weight of a polyether-based urethane prepolymer (AdipreneL-325 manufactured by Uniroyal, NCO content: 2.22 meq/g) filtered and 3parts by weight of a silicone-based nonionic surfactant (SH192manufactured by Toray Dow Corning Silicone Co., Ltd.) were introducedinto a fluorine coated vessel and mixed, and the temperature wasmaintained to 80° C. The mixture was vigorously stirred for about 4minutes at about 900 rpm by using a fluorine coated stirrer withintroducing air into reaction process. 26 parts by weight of4,4′-methylene-bis(o-chloroaniline) (Ihara Cuamine MT manufactured byIhara Chemical Industry) previously melted at 120° C. and filtered wasintroduced thereto. After stirring for about 1 minute, the mixedreaction solution was introduced into a fluorine coated pan-type openmold. When the reaction solution did not flow, the mold was put in anoven and post-cured at 110° C. for 6 hours to produce a foamedpolyurethane resin block. This foamed polyurethane resin block wassliced by a slicer of band saw type (manufactured by Fecken) to obtain afoamed polyurethane resin sheet.

The sheet was buffing treated with a buff (manufactured by Amitec) toform a sheet having the desired thickness (sheet thickness: 1.27 mm).The buffing treated sheet for the polishing layer had an average celldiameter of 45 μm, a specific gravity of 0.86, a hardness of 53, acompressibility of 1.0%, a compression recovery of 65.0% and a flexuralmodulus of 275 MPa. The buffing treated sheet was punched into a diskhaving a diameter of 24 inches (610 mm), and concentric circular grooveshaving a depth of 0.8 mm, width of 0.25 mm and pitch of 1.5 mm wereformed on the surface of the sheet by using a surface groove processingmachine (Toho Engineering) to prepare the polishing layer sheet havinggroove processed polishing surface.

The inner surface of the groove (without post processing) had a centerline average roughness Ra of a roughness curve of 7 to 20 μm.

A double-coated tape (double-tack tape manufactured by Sekisui ChemicalCo., Ltd.) adhered to the opposite side of the groove processed surfaceof the polishing layer sheet by using a laminator.

Production of Polishing Pad

A polyethylene foam (Toray PEF manufactured by Toray Industries, Inc.)(thickness, 0.8 mm) having a surface brushed with a buff and subjectedto corona treatment as a cushion layer was laminated to the adhesivesurface of the double-coated tape on the polishing layer by using alaminator. In addition, a double-coated tape adhered to the oppositeside of the cushion layer by using a laminator to prepare a polishingpad.

The abrasive properties of the resulting polishing pad were measured orevaluated. As a result, a silicon wafer polished by using the polishingpad had scratches after polishing for 15 hours, and the abrasive dustand abrasive slurry were unusually remained in the grooves.

Example 2

100 parts by weight of a polyether-based urethane prepolymer (AdipreneL-325 manufactured by Uniroyal, NCO content: 2.22 meq/g) filtered and 3parts by weight of a silicone-based nonionic surfactant (SH192manufactured by Toray Dow Corning Silicone Co., Ltd.) were introducedinto a fluorine coated vessel and mixed, and the temperature wasmaintained to 80° C. The mixture was vigorously stirred for about 4minutes at about 900 rpm by using a fluorine coated stirrer withintroducing air into reaction process. 26 parts by weight of4,4′-methylene-bis(o-chloroaniline) (Ihara Cuamine MT manufactured byIhara Chemical Industry) previously melted at 120° C. and filtered wasintroduced thereto. After stirring for about 1 minute, the mixedreaction solution was introduced into a fluorine coated pan-type openmold. When the reaction solution did not flow, the mold was put in anoven and post-cured at 110° C. for 6 hours to produce a foamedpolyurethane resin block. This foamed polyurethane resin block wassliced by a slicer of band saw type (manufactured by Fecken) to obtain afoamed polyurethane resin sheet. The sheet was buffing treated with abuff (manufactured by Amitec) to form a sheet having the desiredthickness (sheet thickness: 1.27 mm). The buffing treated sheet for thepolishing layer had an average cell diameter of 45 μm, a specificgravity of 0.86, a hardness of 53, a compressibility of 1.0%, acompression recovery of 65.0% and a flexural modulus of 275 MPa.

The buffing treated sheet was punched into a disk having a diameter of24 inches (610 mm), and concentric circular grooves having a width of0.25 mm, depth of 0.40 mm and pitch of 1.5 mm were formed on the surfaceof the polishing layer sheet by using a surface groove processingmachine. A feed speed of a groove processing tool was No. 1 shown in thefollowing Table 2. The surface roughness of the resulting grooveprocessing surface was measured, and the shape of the groove, surfaceburr and wear of the groove processing tool were evaluated. The resultsare shown in the following Table 1 and Table 2. A double-coated tape(double-tack tape manufactured by Sekisui Chemical Co., Ltd.) adhered tothe opposite side of the groove processed surface of the polishing layersheet by using a laminator. A cushion sheet (polyethylene foam, TorayPEF manufactured by Toray Industries, Inc., thickness: 0.8 mm) having asurface brushed with a buff and subjected to corona treatment waslaminated to the adhesive surface of the double-coated tape on thepolishing layer by using a laminator. In addition, a double-coated tapeadhered to the opposite side of the cushion layer by using a laminatorto prepare a polishing pad.

Example 3

The polishing pad was prepared as described in Example 2 except that thefeed speed of a groove processing tool was No. 4 shown in the followingTable 2. The surface roughness of the resulting groove processingsurface was measured, and the shape of the groove, surface burr and wearof the groove processing tool were evaluated. The results are shown inthe following Table 1 and Table 2.

Comparative Example 2

The polishing pad was prepared as described in Example 2 except that thefeed speed of a groove processing tool was No. 11 shown in the followingTable 2. The surface roughness of the resulting groove processingsurface was measured, and the shape of the groove, surface burr and wearof the groove processing tool were evaluated. The results are shown inthe following Table 1 and Table 2.

The abrasive properties of the polishing pads of Examples 2 to 3 andComparative Example 2 were evaluated. The results are shown in thefollowing Table 1.

TABLE 1 Comparative Example No. Example No. 1 2 1 Surface 5.57 8.5912.54 roughness Ra Abrasive rate 2300 2300 2350 (Å/min) Number of 53 76178 scratches (per a wafer)

TABLE 2 Feed speed of groove processing tool (m/min) T_(s) Groove No. 12 3 4 (sec) shape Burr W 1 0.01 0.03 0.05 1.00 1.00 Δ ∘ Δ 2 0.01 0.030.05 0.08 — ∘ ∘ ∘ 3 0.01 0.03 0.05 — — ∘ ∘ ∘ 4 0.01 0.03 — — — ∘ ∘ ∘ 50.03 0.05 0.08 1.00 — ∘ Δ ∘ 6 0.03 0.05 0.08 — — ∘ Δ ∘ 7 0.03 0.05 — — —∘ Δ ∘ 8 0.01 — — — — ∘ ∘ x 9 0.03 — — — — Δ Δ ∘ 10 0.05 — — — — x x ∘ 110.08 — — — — x x ∘ 12 1.00 — — — — x x ∘ 13 2.00 — — — — x x Δ T_(s):Stop time of groove processing tool W: Wear of groove processing tool

As apparent from the results of Table 1, the polishing pads of Examples2 to 3 had smaller surface roughness of the groove processing surfaceand smaller number of scratches than the polishing pad of ComparativeExample 2. The polishing pads of Examples 2 to 3 had excellent abrasiveproperties as compared with the polishing pad of Comparative Example 2.

On the other hand, in the polishing pad of Comparative Example 2produced without the method of producing the polishing pad of thepresent invention, the abrasive rate was not reduced, but the number ofscratches was very large and the burr on the surface of the pad fromgroove processing was largely degraded.

As described above, the feed speed of a groove processing tool in thepolishing pads of Examples 2 to 3 and Comparative Example 2 are No. 1,No. 4 and No. 11 shown in Table 2, respectively. The feed speed of thegroove processing tool is stepwise varied in No. 1 and No. 4, stepwiseincreased in No. 4, and increased or decreased in No. 1. In No. 1, thereis a time that the feed speed is zero at the position of reaching thegroove processing tool to the desired groove depth.

On the other hand, No. 11 is a conventional method of producing thepolishing pad that the feed speed of the groove processing tool isconstant in the groove processing step. In the polishing pads ofExamples 2 and 3, the grooves having precise rectangle sectional shapeand a few surface burr on the groove processed surface are obtained bystepwise varying the feed speed of the groove processing tool as shownin No. 1 and No. 4. On the other hand, in the polishing pad ofComparative Example 2, since the feed speed is constant as shown in No.11, the sectional shape of the groove is not precise rectangle and thegroove has many surface burrs on the groove processed surface.

1. A semiconductor wafer polishing pad having grooves in a polishingsurface and formed from a foamed polyurethane, wherein a processedsurface of a groove formed in a side surface and a bottom surface has asurface roughness Ra of not more than 10 μm.
 2. The polishing padaccording to claim 1, wherein the processed surface of the groove has asurface roughness Ra of 1 to 9 μm.
 3. A semiconductor wafer polishingpad comprising a polishing layer formed from a porous material andhaving, a polishing surface of the polishing layer with grooves formedtherein, wherein at least one portion of an inner surface of the groovehas a non-porous surface having a surface roughness Ra of 1.0 to 5.0 μm.4. (canceled)
 5. The polishing pad according to claim 3, wherein thegroove has a depth of 0.5 to 1.5 mm.
 6. The polishing pad according toclaim 3 or 5, wherein the polishing layer is formed from a porousmaterial having an average cell diameter of 20 to 70 μm.
 7. Thepolishing pad according to claim 3 or 5, wherein the polishing layer hasa specific gravity of 0.5 to 1.0 g/cm³.
 8. The polishing pad accordingto claim 3 or 5, wherein the polishing layer has a compressibility of0.5 to 5.0%.
 9. The polishing pad according to claim 3 or 5, wherein thepolishing layer has a hardness of 45 to
 65. 10. The polishing padaccording to claim 3 or 5, further comprising a cushion layer, whereinthe cushion layer has lower hardness than the polishing layer.
 11. Amethod of producing a semiconductor wafer polishing pad comprising astep of mechanical cutting by stepwise varying a feed speed and feedamount of a groove processing tool to form concentric circular grooveshaving rectangle sectional shape on the polishing surface.
 12. Themethod according to claim 11, wherein the step of forming the groovescomprises stopping the feed of the groove processing tool for a certaintime at the position that the groove processing tool reaches a desireddepth.
 13. The method according to claim 11, wherein the feed speed andfeed amount of a groove processing tool are stepwise varied andincreased in order of precedence.
 14. The method according to claim 11,wherein the polishing pad is formed from a foamed polyurethane.
 15. Amethod of producing a semiconductor device comprising at least a step ofpolishing the surface of a semiconductor wafer by using the polishingpad according to anyone of claims 1 to 3 and 5 to
 10. 16. The polishingpad according to claim 6, wherein the polishing layer has a specificgravity of 0.5 to 1.0 g/cm³.
 17. The polishing pad according to claim16, wherein the polishing layer has a compressibility of 0.5 to 5.0%.18. The polishing pad according to claim 16, wherein the polishing layerhas a hardness of 45 to
 65. 19. The polishing pad according to claim 16,further comprising a cushion layer, wherein the cushion layer has lowerhardness than the polishing layer.